Dr. Harshad Mehta
Dr. Harshad Mehta has served as the Chairman of our board of directors and our President and Chief Executive Officer since founding Silicon Power in April 1994. From 1983 to 1994, Dr. Mehta was a Project Manager at the Electric Power Research Institute, an independent non-profit institution conducting research on electric power, at which he managed projects related to advanced power electronics, robotics and sensor technologies.
Dr. Mehta received a B.S. in Physics, Chemistry and Math and a M.S. in Physics from Vikram University, India, and a Ph.D. in Electrical Engineering from the University of Florida.
Dr. Vic Temple
Dr. Vic Temple is currently Senior VP for Technology at Silicon Power Corporation, responsible for advanced technology development. His research lab is located in Clifton Park, NY. Prior to joining Silicon Power, Dr. Temple spent 8 years as the Director of Harris’ Power R&D Center in Latham, New York. Harris Power R&D Center was formed by Dr. Temple from the GE R&D Center power semiconductor device and packaging groups, Niskayuna, New York. Dr. Temple had joined GE R&D in 1974.
Dr. Temple received his MEng with a thesis on Self-Adapting Control Systems and a PhD in Physics with a thesis on Silicon MIS and SIS properties from McMaster University in Hamilton, Ontario, Canada.
Dr. Temple’s IC-Foundry fabricated “Super” GTO, which promises smaller size, lower losses and higher speed power switching at high voltage, was an 2007 IR-100 award winner. Exploiting this new device and expanding its applications are a key focus for Dr. Temple and Silicon Power.
Technologies that Dr. Temple has invented and transitioned into products include the light-triggered thyristor (LTT) used in high voltage DC transmission systems, and the Junction Termination Extension (JTE), now used in many, if not most, silicon and silicon carbide high voltage devices to ensure near-ideal, reliable voltage blocking capacity.
Dr. Temple has 81 U.S. Patents on semiconductor devices, packaging and applications, and has published over 150 pages in journals or IEEE meeting proceedings and has contributed to several books. Dr. Temple has received some of the semiconductor industry’s most prestigious awards including an R&D 100 award from R&D Magazine. He was also been recognized by Electronic Device News as one of the 1993 Inventors of the Year for his invention and development of the MOS Controlled Thyristor (MCT), a device that was once featured on the cover of Scientific American.