MAP I Ion Diode System | Silicon Power Corporation

MAP I Ion Diode System

The MAP I Ion Diode System delivers high purity, intense, pulsed ion beams when integrated with a suitable high voltage pulse generator. The system was developed to produce large area pulsed ion beams for ion beam surface treatment operating at a rate of 5 pulses per second.

The system can produce hydrogen, nitrogen, argon and helium ion beams at high purity in single or multiple species. The pulse generator operates from 200 kV to 600 kV at currents of up to 40 kA.

MAP I is the heart of QM1, the first commercial system to use ion beam surface treatment technology. QM1 has been in operation since 1997 and currently treats several thousand parts per week.

Read more about Ion Beam Surface Treatment:
Sandia National Labs technology overview
Sandia National Labs News Release concerning applications

Download the MAP I Data Sheet.

Silicon Power Corporation

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280 Great Valley Parkway
Malvern, PA 19355-1308

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